Memory Programming Specifications

Table 1.
Standard Operating Conditions (unless otherwise stated)
Param  No.	Sym.	Device Characteristics	Min.	Typ†	Max.	Units	Conditions
Data EEPROM Memory Specifications
MEM20	E_D	DataEE Byte Endurance	100k	—	—	E/W	-40°C≤T_A≤+85°C
MEM21	T_{D_RET}	Characteristic Retention	—	40	—	Year	Provided no other specifications are violated
MEM22	N_{D_REF}	Total Erase/Write Cycles before Refresh	1M	10M	—	E/W	-40°C≤ T_A≤+85°C
MEM23	V_{D_RW}	V_DD for Read or Erase/Write operation	V_DDMIN	—	V_DDMAX	V
MEM24	T_{D_BEW}	Byte Erase and Write Cycle Time	—	10	11	ms
Program Flash Memory Specifications
MEM30	E_P	Flash Memory Cell Endurance	10k	—	—	E/W	-40°C≤Ta≤+85°C  (Note 1)
MEM32	T_{P_RET}	Characteristic Retention	—	40	—	Year	Provided no other specifications are violated
MEM33	V_{P_RD}	V_DD for Read operation	V_DDMIN	—	V_DDMAX	V
MEM34	V_{P_REW}	V_DD for Row Erase or Write operation	V_DDMIN	—	V_DDMAX	V
MEM35	T_{P_REW}	Self-Timed Sector Write	—	6	10	ms
MEM36	T_SE	Self-Timed Sector Erase	—	10	14	ms
MEM37	T_{P_WRD}	Self-Timed Word Write	—	55	80	μs
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note: 1.Flash Memory Cell Endurance for the Flash memory is defined as: One Row Erase operation and one Self-Timed Write.