The EEPROM is organized in pages. When
programming the EEPROM, the program data is latched into a page buffer. This allows one
page of data to be programmed simultaneously. The programming algorithm for the EEPROM
data memory is as follows (For details on Command, Address and Data loading, refer to
Programming the Flash):
- 1.Step A: Load Command “0001
0001”.
- 2.Step G: Load Address High Byte (0x00
- 0xFF).
- 3.Step B: Load Address Low Byte (0x00
- 0xFF).
- 4.Step C: Load Data (0x00 -
0xFF).
- 5.Step E: Latch data (give PAGEL a
positive pulse).
- 6.Step K:Repeat 3 through 5 until the
entire buffer is filled.
- 7.Step L: Program EEPROM page
- 7.1.Set BS1 to “0”.
- 7.2.Give
WR a negative pulse. This starts programming of
the EEPROM page. RDY/BSY goes low.
- 7.3.Wait until to
RDY/BSY goes high before programming the next
page. Refer to the figure below for signal waveforms.
Figure 1. Programming the EEPROM
Waveforms