NVM Characteristics

Table 1. NVM Max Speed Characteristics
	Conditions	CPU Fmax (MHz)
	Conditions	0WS	1WS	2WS	3WS
PL0 (-40/85°C)	V_DDIN>1.6 V	6	12	12	12
PL0 (-40/85°C)	V_DDIN>2.7 V	7.5	12	12	12
PL2 (-40/85°C)	V_DDIN>1.6 V	14	28	42	48
PL2 (-40/85°C)	V_DDIN>2.7 V	24	45	48	48

Table 2. NVM Timing Characteristics
Symbol	Timings	Max	Units
t_FPP	Page Write⁽¹⁾	2.5	ms
t_FRE	Row erase⁽¹⁾	6	ms

Note:

1.These values are based on simulation. They are not covered by production test limits or characterization.
2.For this Flash technology, a maximum number of 8 consecutive writes is allowed per row. Once this number is reached, a row erase is mandatory.

Table 3. NVM Reliability Characteristics
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_NVM25k	Retention after up to 25k	Average ambient 55°C	10	50	-	Years
Ret_NVM2.5k	Retention after up to 2.5k	Average ambient 55°C	20	100	-	Years
Ret_NVM100	Retention after up to 100	Average ambient 55°C	25	>100	-	Years
Cyc_NVM	Cycling Endurance⁽¹⁾	-40°C < Ta < 85°C	25K	100K	-	Cycles

Note: 1. An endurance cycle is a write and an erase operation.

Table 4. EEPROM Emulation⁽¹⁾ Reliability Characteristics
Symbol	Parameter	Conditions	Min.	Typ.	Max.	Units
Ret_EE100k	Retention after up to 100k	Average ambient 55°C	10	50	-	Years
Ret_EE10k	Retention after up to 10k	Average ambient 55°C	20	100	-	Years
Cyc_EE	Cycling Endurance⁽²⁾	-40°C < Ta < 85°C	100K	400K	-	Cycles

Note:

(1) The EEPROM emulation is a software emulation described in the App note AT03265.

(2) An endurance cycle is a write and an erase operation.

Table 5. Flash Erase and Programming Current
Symbol	Parameter	Typ.	Units
IDD_NVM	Maximum current (peak) during whole programming or erase operation	10	mA