The EEPROM is organized in pages, please
refer to table, No. of Words in a Page and No. of Pages in the EEPROM, in the Page Size
section. When programming the EEPROM, the program data is latched into a page buffer. This
allows one page of data to be programmed simultaneously. The programming algorithm for the
EEPROM data memory is as follows (For details on Command, Address and Data loading, please
refer to Programming the Flash):
- Step A: Load Command “0001 0001”.
- Step G: Load Address High Byte (0x00 -
0xFF).
- Step B: Load Address Low Byte (0x00 -
0xFF).
- Step C: Load Data (0x00 - 0xFF).
- Step E: Latch data (give PAGEL a
positive pulse).
- Step K:Repeat 3 through 5 until the entire buffer is filled.
- Step L: Program EEPROM page
- Set BS1 to “0”.
- Give WR a negative pulse. This
starts programming of the EEPROM page. RDY/BSY goes low.
- Wait until to RDY/BSY goes high
before programming the next page (Please refer to the following figure for signal
waveforms).
Figure 1. Programming the EEPROM
Waveforms